Group III–V and Group IV Quantum Dot Synthesis

摘要: Semiconductor structures that exhibit quantum confinement effects in three dimensions have attracted considerable attention owing to their potential as tools for exploration of conceptually simple mesoscopic systems, and also because new optoelectronic devices. In order observe unique dot transport optical properties at room temperature, the characteristic carrier confining potentials should be less than 10–20 nm. Although electronic structure issues are quite different group III–V semiconductors (prototypically GaAs/AlGaAs) IV Si Ge), growth dense arrays small (≤ 10 nm), uniformly-sized important goals both materials systems. particular, there is a compelling need development synthesis techniques capable making denselypacked,uniformly-sized which 10–15 nm size, over large areas.