作者: Jacques Bourgoin , Michel Lannoo
DOI: 10.1007/978-3-642-81832-5_8
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摘要: Defects or impurities are introduced in semiconductors, intentionally unintentionally, during the growth process following heat treatments. Quenching, plastic deformation and irradiation other ways by which defects can be created. The problem with heating, quenching [8.1] is that produced, practically all unidentified up to now most materials, complexes resulting from interaction of intrinsic (vacancies, interstitials, divacancies) various present initially material. Moreover, concentration these difficult, if not impossible, control (see [Ref.1.1, Sect.6.4] for discussion quenching). On contrary, concentration, distribution (to some extent) nature produced an controlled. defect proportional dose irradiation; a function irradiating particle, their energy, contained material have ability trap originally irradiation. For this basic motivation, but also practical reasons (knowledge behavior electronic devices submitted radiations nuclear reactors, space, etc.) radiation effects semiconductors been widely studied [8.2].