Quantum dot lasers and optoelectronic device integration
作者： K. Sears , S. Mokkapati , M. Buda , P. Lever , H.H. Tan
DOI: 10.1109/LEOS.2005.1548151
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摘要: This paper highlights quantum dot (QD) lasers and QD optoelectronic device integration. The emission spectrum, room temperature photoluminescence, electroluminescence spectra of a 3-stacked InAs laser are presented. On the other hand, monolithic integration devices is desirable for practical applications, as this would lead to low loss, high speed modules, operating at lower currents.
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