Field effect passivation of high efficiency silicon solar cells

摘要: In this paper effective surface recombination velocities Seff at the rear SiSiO2 interface of presently best one -sun silicon solar cell structure are calculated on basis measured oxide parameters. A new design is proposed allowing for a control space charge region by gate voltage. It shown that electric field introduced positive fixed density typically found thermally oxidized surfaces and favorable work function difference between metal aluminum leads to reduction values well below 1 cm/s AM1.5 illumination n-type as p-type silicon. At low levels, however, has much better passivation properties than due small hole capture cross section (σn/gsp ≈ 1000 midgap). Only intensities substrates or in case poor quality incorporation electrode promising tool further reducing losses.