Behavioral comparison of Si and SiC power MOSFETs for high-frequency applications
作者： Zheng Chen , Dushan Boroyevich , Jin Li
DOI: 10.1109/APEC.2013.6520640
关键词:
摘要: As SiC MOSFETs have become more popular today, it is important to understand how the new devices are different from conventional Si MOSFETs, and whether they can directly replace their counterparts in converters. This paper answers these questions through comprehensive comparisons of two technologies device static characteristics, switching performances, temperature behaviors, loss distributions a high-frequency DC-DC converter. The shows that do exhibit behaviors than many ways, explains co-related with proposes design considerations when using
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