Modelling of Interconnects by Boundary Element Method

作者: W. Wlodarczyk

DOI: 10.1007/978-3-642-45678-7_14

关键词:

摘要: Scaling down of chip-to-chip interconnections to finer geometries can limit the overall performance a digital system and therefore better characterization its electrical parameters is demanded. In order extract equivalent circuit interconnect structures, related 2-D electromagnetic field problems are solved by use boundary element method (BEM). Special attention paid frequency dependent conductor losses due skin effect.

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