Phase evolution in boron nitride thin films
作者： D.J. Kester , K.S. Ailey , R.F. Davis , K.L. More
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摘要: Boron nitride (BN) thin films were deposited on monocrystalline Si (100) wafers using electron beam evaporation of boron with simultaneous bombardment by nitrogen and argon ions. The effect film thickness the resultant BN phase was investigated Fourier transform infrared (FTIR) spectroscopy high resolution transmission microscopy (HRTEM). These techniques revealed consecutive deposition an initial 20 A thick layer amorphous BN, 20--50 hexagonal having a layered structure, final cubic phase. growth sequence layers is believed to result primarily from increasing biaxial compressive stresses. Favorable surface interface energy crystallographic relationships may also assist in nucleation phases, respectively. presence regions explains why there have been no reports 100% Si.
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