In Situ Oxidation of GaN Layer and Its Effect on Structural Properties of Ga 2 O 3 Films Grown by Plasma-Assisted Molecular Beam Epitaxy

摘要: Plasma-assisted molecular beam epitaxy (PAMBE) was used to grow Ga2O3 films on oxidized GaN layers nitrided sapphire substrates. The layer grown by PAMBE, and the in situ oxidation of achieved through exposure oxygen plasma, which resulted formation monoclinic β-Ga2O3. Crystalline β-Ga2O3 were layers, with without oxidation. orientation relationships [\(11\overline{2} 0\)] Al2O3//[\(1\overline{1} 00\)] AlN//[\(1\overline{1} GaN//[102] [\(1\overline{1} Al2O3//[\(11\overline{2} AlN//[\(11\overline{2} GaN//[010] not single-crystalline but showed rotational domains along growth direction three variations, six-fold symmetry instead two-fold symmetry. surface roughness film closely reflected that as-grown GaN. By analyzing x-ray omega rocking curves for on-axis (\(\overline{2} 01\)) off-axis (002) reflections, it concluded dominantly affected crystal quality films.