Dewetted Pt nanostructures on Silicon Carbide surface

摘要: Abstract We exploit the thermal-induced dewetting process of a deposited Pt film to produce two-dimensional arrays nanostructures on SiC surface. After depositing 7.5 nm-thick SiC, we performed annealings increasing temperature from 773 1073 K. Energy dispersive X-ray spectroscopy, atomic force microscopy, and scanning electron microscopy analyses were crossed draw information chemical morphological evolution annealing temperature. The gradual film, due ongoing process, holed web filaments connecting agglomerates to, finally, isolated shaped was observed. surface roughness, fraction uncovered area by metal mean height planar size dewetted quantified versus extract quantitative main parameters characterizing morphology.