作者: K. Orgassa , H.W. Schock , J.H. Werner
DOI: 10.1016/S0040-6090(03)00257-8
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摘要: Abstract We fabricate Cu(In,Ga)Se 2 thin film solar cells with a variety of different back contact metals (W, Mo, Cr, Ta, Nb, V, Ti, Mn) on glass substrates. A compositional analysis absorber layers the metallized substrates identifies W, Ta and Nb as being inert during deposition. investigate decreasing thickness, focussing increasing influence an optical reflector. The best device efficiencies obtained are 14.2% 13.8% 13.3% 10% 5.9% Cr 3.4% V. For Ga-grading at side improves passivation absorber/back interface.