Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging

摘要: Doped silicon nanowires (NWs) were epitaxially grown on substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with atoms introduced into the gas phase ablation of lightly and highly doped target material. p-n or p(++)-p junctions located at NW-silicon substrate interfaces thus realized. To detect these visualize them electron beam induced current technique two-point probe current-voltage measurements used, based nanoprobing individual NWs scanning microscope. Successful NW doping material could experimentally be demonstrated. This strategy compared to commonly used from during chemical vapour is evaluated essentially view potentially overcoming limitations doping, shows inhomogeneities between top bottom as well core shell structural lattice defects, especially when high levels are envisaged. The yields homogeneously level can controlled choice As further benefit, this procedure does not require use poisonous gases may applied grow only but also other kinds semiconductor NWs, e. g. group III nitrides arsenides.