Application-Specific SRAM Design Using Output Prediction to Reduce Bit-Line Switching Activity and Statistically Gated Sense Amplifiers for Up to 1.9 $\times$ Lower Energy/Access
作者： Mahmut E. Sinangil , Anantha P. Chandrakasan
DOI: 10.1109/JSSC.2013.2280310
关键词:
摘要: This paper presents an application-specific SRAM design targeted towards applications with highly correlated data (e.g., video and imaging applications). A prediction-based reduced bit-line switching activity scheme is proposed to reduce on the bit-lines based bit-cell array structure. statistically gated sense-amplifier approach used exploit signal statistics energy consumption of sensing network. These techniques provide up 1.9 × lower energy/access when compared 8T SRAM. savings are in addition that achieved through voltage scaling demonstrate advantages design.
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