作者: S. Miyazaki , H. Nishimura , M. Fukuda , L. Ley , J. Ristein
DOI: 10.1016/S0169-4332(96)00805-7
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摘要: Abstract The chemical and electronic structures of ultrathin SiO2 thermally grown on Si(100) Si(111) have been investigated by using Fourier-transform infrared attenuated total reflection (FT-IR-ATR) X-ray or ultraviolet excited photoelectron spectroscopy (XPS/UPS), respectively. A red-shift the p-polarized LO phonon peak observed for oxides thinner than 2 nm indicates that compressively strained SiOSi bonds exist near SiO Si interface. extent structural strain induced in interface region is found to be smaller at 1000°C 800°C Si(100). It also that, from onset energy loss signal O1s photoelectrons, bandgap thicker ∼2.3 8.95 ± 0.05 eV irrespective oxide thickness. For nm, a remarkable increase 5–9 photoelectrons observed. This could attributed not only contribution suboxides but built-in stress which causes band edge tailing.