作者: S. K. Jerng , J. H. Lee , D. S. Yu , Y. S. Kim , Junga Ryou
DOI: 10.1021/JP210910U
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摘要: Direct graphene growth on insulating substrates is of great importance for electronics. Limited accomplishments by using molecular beam epitaxy have been demonstrated hexagonal symmetry. For comparison and further progress, we study the graphitic carbon cubic MgO substrates. Raman spectra clearly show D, G, 2D peaks, confirming formation nanocrystalline graphite. The degree graphitization comparable to those layers grown X-ray photoelectron spectroscopy proves dominance sp2 bonding, transmission electron microscopy reveals nanometer-scale clusters directly. flatness homogeneity MgO(100) are also beneficial potential applications heterostructures containing carbon. First-principles calculations elucidate that strong carbon–oxygen interaction limits in-plane coherence length.