Optimization of Hole Injection and Transport Layers for High-Performance Quantum-Dot Light-Emitting Diodes
作者： Jae Seung Shin , Jong Hun Yu , Su Been Heo , Seong Jun Kang
DOI: 10.3938/JKPS.75.1033
关键词:
摘要: High-luminance, efficient quantum-dot light-emitting diodes (QLEDs) have been achieved by optimizing the balance between hole injection layer (HIL) and transport (HTL). Different concentrations of vanadium oxide (V2O5) poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(4-sec-butylphenyl)diphenylamine)] (TFB) solutions were used to form HIL HTL, respectively, for QLEDs. The behavior was characterized using hole-only devices (HODs). QLEDs, which prepared with 0.5 wt.% V2O5 0.1 TFB as showed a maximum current efficiency 2.27 cd·A−1 luminance 71,260 cd·m−2. Moreover, turn-on voltage device low 2.2 V due carrier transport. results provide useful information fabricating high-performance
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