Opportunities for Standard Silicon Technology in RF&Microwave Applications

摘要: Various components for the integration of Monolithic Microwave Integrated Circuits (MMIC's) in a 0.8 ?m-BiCMOS silicon technology, such as high-Q spiral inductors and capacitors, broad-band transformers, varactor diodes are presented discussed. Inductor Q's close to 10 at 2 nH inductance have been achieved by shunting multiple interconnect levels together, sufficient spacing inductor structure from substrate, using high substrate resistivity.