On the origin of the 1-eV band in photoluminescence from Cd1−x Zn x Te

作者: V. E. Sedov , O. A. Matveev , A. I. Terent’ev , N. K. Zelenina

DOI: 10.1134/S1063782607090059

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摘要: Photoluminescence (PL) at 77 K from Cd1−xZnxTe samples (x = 0, 0.005 and 0.01) annealed 900°C cadmium vapor pressure PCd 3 × 104−2 105 Pa has been studied. It was found that the contribution of 1-eV band to spectrum-integrated PL these is independent PCd, in contrast Cd0.95Zn0.05Te which this increases up ∼90% as grows. The not shifted shorter wavelengths x becomes larger. conclusion Zn vacancies are involved formation properties confirmed. attributed capture free holes acceptor levels related both zinc. These closely spaced and, therefore, difficult resolve.

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