Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO2Interface
作者： L. C. Feldman , P. J. Silverman , J. S. Williams , T. E. Jackman , I. Stensgaard
DOI: 10.1103/PHYSREVLETT.41.1396
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sci-hub.se 参考文章(1)
S. T. Picraux, W. L. Brown, W. M. Gibson, Lattice Location by Channeling Angular Distributions: Bi Implanted in Si Physical Review B. ,vol. 6, pp. 1382- 1394 ,(1972) , 10.1103/PHYSREVB.6.1382