A method for reducing MOSFET high side power switch turn-on time
作者： Razvan Puscasu , Laurentiu Creosteanu , Gheorghe Brezeanu
DOI: 10.1109/SMICND.2013.6688684
关键词:
摘要: A novel method for reducing the turn-on time of a high side MOSFET power switch is presented. By discharging loaded capacitor into gate switch, an important reduction has been obtained. This driving compared with classical case in which charged only by charge pump block.
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