Semiconductor article with porous structure

摘要: A method is provided for producing, with high reproducibility, an SOI substrate which flat and in quality, simultaneously achieving resources saving reduction cost through recycling of a member. For accomplishing this, porous-forming step performed forming porous Si layer on at least surface large porosity the layer. This by implanting ions into given projection range or changing current density anodization said step. At this time, non-porous single-crystal epitaxial-grown Thereafter, support are bonded together, then separation porosity. Subsequently, selective etching to remove