作者: Yoshimi Horio , Yuichiro Hara , Yoshitaka Yamamoto , Yuuki Morimoto , Tatsuya Naitoh
关键词:
摘要: The thermal oxidation of titanium (Ti) thin films has been investigated, focusing on the depth profile oxygen and crystallinity. Ti were epitaxially grown Si(001) substrates, even at room temperature, by electron bombardment. oxidations carried out in an environment 0.1 Torr temperatures ranging from 200 to 1000 °C for a fixed time 30 min. It was found that film insufficiently oxidized temperature lower than 600 °C, crystalline TiO Ti2O3 formed. Above sufficiently its crystal structure became completely rutile-type TiO2. No anatase appeared any temperature. A diffusion model is presented each volume expansion due also examined obtained be 1.77.