作者: Dae-Hyun Kim , Kyung-Soo Park , Young-Jin Choi , Heon-Jin Choi , Jae-Gwan Park
DOI: 10.4191/KCERS.2011.48.1.094
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摘要: A Sn-doped In₂O₃ (ITO) nanowire photoelectrode was produced using a simple metal evaporation method at low synthesis temperature (<540℃). The electrodes have large surface area compared with that of flat ITO thin film, and show electrical resistivity 5.6×10 ?3 Ω㎝ room temperature. In order to apply nanowires the photoelectrodes dye-sensitized solar cell (DSSC), those surfaces were modified by TiO₂ nanoparticles chemical bath deposition (CBD) method. conversion efficiency fabricated TiO₂/ITO nanostructure-based DSSC obtained 1.4%, which increased value factor 6 than one without photoelectrode. This result is attributed superior property photoelectrode, as well structural advantages, including short diffusion length photo-induced electrons, TiO2/ITO DSSC.