Semiconductor photodetector device

作者: Takaki Iwai , Hisatada Yasukawa , Yasushi Jin , Ryouichi Ito , Masaki Taniguchi

DOI:

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摘要: A semiconductor photodetector device includes: a first layer of conductivity type; and second type formed on the having light-receiving region. The includes region containing an impurity at high concentration lower than that third higher fourth

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