A New Thermal Model for Power Mosfet Devices Accounting for the Behavior in Unclamped Inductive Switching
作者： Angelo Raciti , Salvatore Musumeci , Filippo Chimento , Giovanni Privitera
DOI: 10.1016/J.MICROREL.2015.11.020
关键词:
摘要: The main aim of this work has been the analysis transient thermal behavior several typologies power MOSFET devices. commonly used model applied to different devices families with breakdown voltages. large difference between experimental results and simulation runs, performed classical approach for some kinds devices, leads correct traditional mathematical build up a new one in which real size epytaxial layer is taken into account. shows better fitting evidence confirms its suitability all proofed process developed, comparison carried out measured temperatures on device estimation by model. are shown good achieved measurements demonstrate proposed approach.
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