Electrochemical plating methods
作者： Ismail Emesh , John W. Lam , Roey Shaviv
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摘要: An electrochemical process for applying a conductive film onto substrate having seed layer includes placing the into contact with an plating bath containing cobalt or nickel, pH of 4.0 to 9.0. Electric current is conducted through substrate. The nickel ions in deposit layer. may contain chloride and glycine. electric range from 1-50 milli-ampere per square cm. After completion process, be removed bath, rinsed dried, then annealed at temperature 200 400 C improve material properties reduce seam line defects. anneal performed multiple cycles.
lens.org 参考文章(28)
Ismail T. Emesh, Semiconductor reflow processing for feature fill ,(2013)
Hooman Hafezi, Aron Rosenfeld, Apparatus and method for improving uniformity in electroplating ,(2006)
Peter Hey, Byung-Sung Leo Kwak, Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio ,(2001)
Li Li, Yongjun Jeff Hu, Electrochemical cobalt silicide liner for metal contact fills and damascene processes ,(2000)
John H. Sukamto, Thomas A. Ponnuswamy, Steven T. Mayer, Jonathan D. Reid, Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers ,(2010)
Sung-Hsiung Wang, Method for forming thick copper self-aligned dual damascene ,(2003)
Fusen Chen, Bo Zheng, Hougong Wang, Girish Dixit, Method of application of electrical biasing to enhance metal deposition ,(2001)
Chandra Tiwari, Electroless metal deposition methods ,(2004)
Veeraraghavan S. Basker, Soon-Cheon Seo, James J. Kelly, Balasubramanian Pranatharthi Haran, Tuan A. Vo, Superfilled metal contact vias for semiconductor devices ,(2010)
Ina Stankeviciene, Eugenijus Norkus, Aldona Jagminiene, Algirdas Vaskelis, Electroless deposition of cobalt alloys ,(2007)