Effect of small nitrogen dilution on the microstructure of hydrogenated silicon thin films deposited by magnetron radiofrequency sputtering
作者： S Charvet , A Zeinert , C Gonçalves , M Goës , None
DOI: 10.1016/J.TSF.2003.11.307
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摘要: Abstract The effects of the nitrogen dilution and pressure on structural optical properties hydrogenated microcrystalline silicon films deposited at 250 °C by radiofrequency magnetron sputtering method have been studied in (0–1%) range percentage gas phase mixture (Ar 70%–H 2 30%, total 5 Pa). A combination mass spectrometry, Raman spectroscopy, infrared absorption, UV–visible transmission photothermal deflection spectroscopies has used to characterize films. Mass spectrometry revealed that SiH /SiH ratio decreased when increasing partial pressure. This change found be related microstructural transition from amorphous while spectroscopy showed an increase SiN bonds. explained terms reaction crystallization precursors with nitrogen. very small leads important enrichment films, which causes decrease absorption coefficient refractive index gap. suggests turned into nitride alloy.
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