Method of silicon carbide monocrystalline boule growth
作者： Rodd Mitchell Ware , Sonia Holmes , Aneta Kopec , Shaoping Wang
DOI:
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摘要: A method of growing a silicon carbide single crystal on seed in an inert gas environment includes the step raising temperature to growth T and source material that is lower than define thermal gradient therebetween. The process also requires maintaining constant throughout substantially entire period crystal. begins when reach . Another changing only pressure during control rate rather any temperatures once has started.
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