Bandgap alteration of transparent zinc oxide thin film with Mg dopant
作者： M. Salina , R. Ahmad , A.B. Suriani , M. Rusop
DOI: 10.4313/TEEM.2012.13.2.64
关键词:
摘要: We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the from 0 to 30 atomic percent (at.%), decrement value in cutoff is observed, where absorption edge shifts continuously shorter wavelength side, towards 300 nm. This resulted significant increment 3.28 3.57 eV. However, transmittance at 350-800 nm gradually downgraded, 93 80 % which most probably due grain size that becomes bigger, and it also affected electrical properties. The 45 0.05 mA +10 V was observed I-V characteristics, concluding relationship; higher optical materials will exhibit lower conductivity. These findings may be useful optoelectronics devices.
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