Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions
作者： A. Reinartz , J. Schmalhorst , G. Reiss
DOI: 10.1063/1.3065521
关键词:
摘要: Magnetic tunnel junctions with two MgO barriers separated by a free CoFeB middle electrode have been investigated. As compared to single barrier junctions, the magnetoresistance increase due annealing was smaller for these systems. The Neel coupling induced hysteresis shift of decreased, while coercivity and exchange bias field pinned ferromagnetic layers increased increasing temperature. For decreasing thickness we observed that contribution upper decreases probably islandlike growth mode on MgO. Besides found an additional dips in major loops caused magnetic interactions top layer.
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