Temperature dependence of the energy gap in semiconductors

作者: Y.P. Varshni

DOI: 10.1016/0031-8914(67)90062-6

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摘要: … Most of the variation in the energy gap with temperature is believed to arise from the following two mechanisms: (1) A shift in the relative position of the conduction and valence …

参考文章(14)
F. M�glich, R. Rompe, Über den Einfluß der Wärmedehnung auf das Absorptionsspektrum von Isolatoren European Physical Journal. ,vol. 119, pp. 472- 481 ,(1942) , 10.1007/BF01339784
Jack R. Dixon, James M. Ellis, Optical Properties ofn-Type Indium Arsenide in the Fundamental Absorption Edge Region Physical Review. ,vol. 123, pp. 1560- 1566 ,(1961) , 10.1103/PHYSREV.123.1560
W. J. Turner, W. E. Reese, G. D. Pettit, Exciton Absorption and Emission in InP Physical Review. ,vol. 136, pp. A1467- A1470 ,(1964) , 10.1103/PHYSREV.136.A1467
J. E. Desnoyehs, J. A. Morrison, The heat capacity of diamond between 12·8° and 277°k Philosophical Magazine. ,vol. 3, pp. 42- 48 ,(1958) , 10.1080/14786435808243223
P. Flubacher, A. J. Leadbetter, J. A. Morrison, The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectra Philosophical Magazine. ,vol. 4, pp. 273- 294 ,(1959) , 10.1080/14786435908233340
E. N. Adams, Vasileff's Calculation of Electronic Self-Energy in Semiconductors Physical Review. ,vol. 107, pp. 671- 671 ,(1957) , 10.1103/PHYSREV.107.671
M. D. Sturge, Optical Absorption of Gallium Arsenide Between 0.6 and 2.75 eV Physical Review. ,vol. 127, pp. 768- 773 ,(1962) , 10.1103/PHYSREV.127.768
J. Bardeen, W. Shockley, Deformation Potentials and Mobilities in Non-Polar Crystals Physical Review. ,vol. 80, pp. 72- 80 ,(1950) , 10.1103/PHYSREV.80.72