Fabrication and Characterization of a Tunable In-plane Resonator with Low Driving Voltage.
作者： Pin-Hsu Kao , Ching-Liang Dai , Cheng-Chih Hsu , Chi-Yuan Lee
DOI: 10.3390/S90302062
关键词:
摘要: This study presents the fabrication and characterization of a micromechanical tunable in-plane resonator. The resonator is manufactured using commercial 0.35 µm complementary metal oxide semiconductor (CMOS) process. made aluminum, sacrificial layer silicon dioxide. post-process involves only one maskless etching step an etchant to remove layer. includes three parts: driving part provide force, sensing that used detect change in capacitance when vibrating, tuning changes resonant frequency main advantages are low voltage compatibility with CMOS can be changed upon applying dc part. To reduce voltage, designed as comb-finger rows. Experimental results show has about 183 kHz 10 V; increases 14 30 V applied. maximum frequency–tuning ratio 7.6%.
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