In depth study of the compensation in annealed heavily carbon doped GaAs
作者： A. Rebey , W. Fathallah , B. El Jani
DOI: 10.1016/J.MEJO.2005.02.127
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摘要: Abstract Heavily C-doped GaAs epitaxial layers with holes concentrations ranging from 1019 to 1.6×1020 cm−3 have been grown by metal organic vapour phase epitaxy (MOVPE) using CCl4 as C-growth precursor. The carbon doping characteristics of epilayers investigated optimizing the V/III ratio and growth temperature. Additional informations extracted evolution in situ reflectivity signal during GaAs:C. appearance discernible oscillations response indicates high incorporation good surface quality spite etching effect. hole concentration tends saturate at about 1.5×1020 cm−3. comparison between Hall effect measurements realized on sets annealed layers, theoretical calculations mobility lead determination compensation samples. lattice matching conditions were systematically X-ray diffraction (004) (115) planes. A experimental mismatch one calculated Vegard's law allows estimation possible origin compensation. Secondary ion mass spectrometry, scanning electron microscopy atomic force used complementary tools characterize films.
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