Influence of Stacking Disorder on the Raman Spectrum of 3C‐SiC
作者： S. Rohmfeld , M. Hundhausen , L. Ley
DOI: 10.1002/(SICI)1521-3951(199909)215:1<115::AID-PSSB115>3.0.CO;2-3
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摘要: … laser-annealed polycrystalline 3C-SiC layers. Compared to single crystal 3C-… 3C-SiC located at 793.4 cmÀ1 and a second broader line centered around 767 cmÀ1. After laser annealing …
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