Preparation and properties of Bi4-xLaxTi3O12 thin films by chemical solution deposition

作者: Di Wu , Aidong Li , Tao Zhu , Zhiguo Liu , Naiben Ming

DOI: 10.1080/00150190108015989

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摘要: Abstract Bi4-xLaxTi3O12 (BLTx) thin films were prepared by chemical solution deposition and characterized X-ray diffraction, electron probe micro-analysis, electric optical measurements. Layered perovskite BLTx films, with compositions close to their respective nominal compositions, can be obtained 180 s annealing at a temperature as low 650 °C. Hysteresis measurement reveals that BLT0.75 have the largest remanent polarization, 12.3 μC/cm2 200 kV/cm maximum field for °C annealed films. Fatigue-free characteristic of is observed high field, frequency cycling. Optical transmittance measurements show absorption edge shifts lower wavenumbers increasing La substitution.

参考文章(8)
Di Wu, Aidong Li, Tao Zhu, Zhiguo Liu, Naiben Ming, Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by chemical solution deposition Journal of Applied Physics. ,vol. 88, pp. 5941- 5945 ,(2000) , 10.1063/1.1322387
Caro-Beth Stewart, Active ancestral molecules Nature. ,vol. 374, pp. 12- 13 ,(1995) , 10.1038/374012A0
J C Manifacier, J Gasiot, J P Fillard, A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film Journal of Physics E: Scientific Instruments. ,vol. 9, pp. 1002- 1004 ,(1976) , 10.1088/0022-3735/9/11/032
Hideaki Adachi, Tsuneo Mitsuyu, Osamu Yamazaki, Kiyotaka Wasa, Ferroelectric (Pb,La)(Zr,Ti)O3epitaxial thin films on sapphire grown by rf‐planar magnetron sputtering Journal of Applied Physics. ,vol. 60, pp. 736- 741 ,(1986) , 10.1063/1.337423
B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, W. Jo, Lanthanum-substituted bismuth titanate for use in non-volatile memories Nature. ,vol. 401, pp. 682- 684 ,(1999) , 10.1038/44352
D. J. Taylor, R. E. Jones, P. Zurcher, P. Chu, Y. T. Lii, B. Jiang, S. J. Gillespie, Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications Applied Physics Letters. ,vol. 68, pp. 2300- 2302 ,(1996) , 10.1063/1.116170
J. F. Scott, M. Alexe, N. D. Zakharov, A. Pignolet, C. Curran, D. Hesse, NANO-phase SBT-family ferroelectric memories Integrated Ferroelectrics. ,vol. 21, pp. 1- 14 ,(1998) , 10.1080/10584589808202046