Broadband single‐electron tunneling transistor
作者： E. H. Visscher , J. Lindeman , S. M. Verbrugh , P. Hadley , J. E. Mooij
DOI: 10.1063/1.115622
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摘要: A single‐electron tunneling transistor has been directly coupled on‐chip to a high electron mobility transistor. The (HEMT) is used as an impedance matching circuit with gain close unity. HEMT transformed the 1.4 MΩ output of single (SET) by two orders magnitude down 5 kΩ, increasing its bandwidth 50 kHz. This makes it possible observe motion individual electrons at frequencies. requirements for in frequency applications discussed.
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