Role of barium substitution on oxygen vacancy reduction in BiFeO 3 thin films

摘要: Despite high antiferromagnetic Neel and ferroelectric Curie temperature bismuth iron oxide (BiFeO3) is inherited with some drawbacks. These drawbacks include its weak ferromagnetic behavior large leakage current. For overcoming these we here report sol–gel preparation of barium substituted BiFeO3 (Bi1-xBaxFeO3; x = 0.0–0.3) thin films. Formation rhombohedrally distorted structure observed in XRD patterns. Replacement Ba2+ host lattice leads to strain relaxation This will create oxygen vacancies that are less number mobile suppressed. Decrease increase substitution level also confirmed using XPS EDS analysis. Barium atoms fully dissolved the at low substituent concentration (x = 0.05–0.2). At (x = 0.25 0.3) peaks corresponding BaO phase SEM images show grain size < 60 nm. Increase dielectric constant takes place from 45.8 153.61 (log f = 4.0) increased 0.0 0.2. Cole–Cole plots indicate dominant role boundaries process. Detailed room impedance Arrhenius reveal results enhanced insulting nature supported by activation energy 1.8 eV. Enhanced decreased conductivity work function 5.08 5.12 eV. Bi1–xBaxFeO3 films behavior. High saturation magnetization 139.35 emu/cm3 obtained for x = 0.2. magnetocrystalline anisotropy single domain adds enhancement magnetization.