The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
作者： A. Jasik , A. Wnuk , A. Wójcik-Jedlińska , R. Jakieła , J. Muszalski
DOI: 10.1016/J.JCRYSGRO.2008.02.018
关键词:
摘要: The impact of two technological parameters, i.e., the growth temperature and interface interruption, on crystal quality strained InGaAs/GaAs quantum well (QW) structures was studied. investigated heterostructures were grown by molecular beam epitaxy (MBE) metalorganic chemical vapour deposition (MOCVD) under As-rich conditions. Photoluminescence (PL), reflection high-energy electron diffraction (RHEED) atomic force microscopy (AFM) adopted for evaluation specified interfaces smoothness layers. Comparison between both epitaxial techniques allowed us to find, that plays more significant role in case MBE technique, whereas MOCVD is sensitive interruption. Optimum values parameters QW crystallization obtained techniques.
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