作者: Tae-Eun Song , Seho Lee , Hee Han , Soonyoung Jung , Soo-Hyun Kim
DOI: 10.1116/1.5080954
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摘要: In this work, the authors developed a simple and efficient two-step deposition process for realization of an x-ray absorption grating: ALD (atomic layer deposition) conductive seed layer, followed by electroplating absorbing metal with pulse current mode. An Si grating high aspect ratio 1:40 was fabricated deep reactive ion etching on 8 in. wafer. order to form such over area 10 × 10 cm2, Ru conformally deposited thermal O2 reactant gas. The analyzed results performed in different bias modes fill Au structure. It found that mode (duty cycle: 5%, density: 1.7 mA/cm2) 79 h allowed uniformly entire area, whereas direct mode, severe step coverage top observed. successfully tested suggested as (G2) energy Talbot-Lau interferometer.