Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices
作者： R. W. Kaliski , P. Gavrilovic , K. Meehan , J. Gavrilovic , K. C. Hsieh
DOI: 10.1063/1.335710
关键词:
摘要: Photoluminescence and absorption data are presented on Al x Ga1−x As‐GaAs superlattices(SLs) disordered into bulk‐crystal y Ga1−y As (0≤y≤x) by Si or Gediffusion. The produced impurity‐induced disordering (by Al‐Ga interchange) is determined transmission electron microscopy, measurements, photoluminescence to be homogeneous, with an alloy composition (y) that agrees the average concentration of SL. For low enough (y≊0.23
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sci-hub.se 参考文章(14)
K. Meehan, J. M. Brown, P. Gavrilovic, N. Holonyak, R. D. Burnham, T. L. Paoli, W. Streifer, Thermal‐anneal wavelength modification of multiple‐wellp‐nAlxGa1−xAs‐GaAs quantum‐well lasers Journal of Applied Physics. ,vol. 55, pp. 2672- 2675 ,(1984) , 10.1063/1.333277
K. Meehan, P. Gavrilovic, J. E. Epler, K. C. Hsieh, N. Holonyak, R. D. Burnham, R. L. Thornton, W. Streifer, Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers Journal of Applied Physics. ,vol. 57, pp. 5345- 5348 ,(1985) , 10.1063/1.334853
K. Meehan, P. Gavrilović, N. Holonyak, R. D. Burnham, R. L. Thornton, Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering Applied Physics Letters. ,vol. 46, pp. 75- 77 ,(1985) , 10.1063/1.95859
J. J. Coleman, P. D. Dapkus, M. D. Camras, N. Holonyak, W. D. Laidig, T. S. Low, M. S. Burroughs, K. Hess, Absorption, stimulated emission, and clustering in AlAs‐AlxGa1−xAs‐GaAs superlattices Journal of Applied Physics. ,vol. 52, pp. 7291- 7295 ,(1981) , 10.1063/1.328717
E. F. Schubert, K. Ploog, Shallow and deep donors in direct-gap n -type Al x Ga 1 − x A s : S i grown by molecular-beam epitaxy Physical Review B. ,vol. 30, pp. 7021- 7029 ,(1984) , 10.1103/PHYSREVB.30.7021
K. Meehan, N. Holonyak, J. M. Brown, M. A. Nixon, P. Gavrilovic, R. D. Burnham, Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion Applied Physics Letters. ,vol. 45, pp. 549- 551 ,(1984) , 10.1063/1.95318
R. J. Nelson, N. Holonyak, W. O. Groves, Free-exciton transitions in the optical absorption spectra ofGaAs1−xPx Physical Review B. ,vol. 13, pp. 5415- 5419 ,(1976) , 10.1103/PHYSREVB.13.5415
R. D. Burnham, P. D. Dapkus, N. Holonyak, J. A. Rossi, LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:Ge Applied Physics Letters. ,vol. 14, pp. 190- 192 ,(1969) , 10.1063/1.1652769
P. Gavrilovic, K. Meehan, J. E. Epler, N. Holonyak, R. D. Burnham, R. L. Thornton, W. Streifer, Impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well laser Applied Physics Letters. ,vol. 46, pp. 857- 859 ,(1985) , 10.1063/1.95864
R.J. Nelson, N. Holonyak, Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1-xGaxP Journal of Physics and Chemistry of Solids. ,vol. 37, pp. 629- 637 ,(1976) , 10.1016/0022-3697(76)90113-X