作者: C. Gustin , S. Faniel , B. Hackens , E.P. De Poortere , M. Shayegan
DOI: 10.1016/S1386-9477(02)00722-1
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摘要: We investigate the transport properties of semiconductor ballistic cavities subject to a parallel magnetic field. Universal conductance fluctuations are observed on two GaAs/AlGaAs quantum well samples with one and occupied carrier subbands, respectively. Large differences between open dots in both amplitude frequency distribution these analyzed terms electron orbital motion subband depopulation. (C) 2002 Elsevier Science B.V. All rights reserved.