Transverse magnetoresistance peculiarities of thermoelectric Lu-doped Bi2Te3 compound due to strong electrical disorder

摘要: Abstract The n-type thermoelectric Bi1.9Lu0.1Te3 was prepared by microwave-solvothermal method and spark plasma sintering. magnetic field temperature dependences of transverse magnetoresistance measured within 2–200 K interval allow finding the peculiarities characteristic for strongly disordered inhomogeneous semiconductors. first peculiarity is due to appearance linear-in-magnetic contribution total reflected in a crossover from quadratic at low fields linear high fields. can result Hall resistance picked up macroscopically distorted current paths local variations stoichiometry compound studied. second that both magnitude are functions carrier mobility which agreement with Parish Littlewood model developed An increase decrease accompanied an field. Finally, third related remarkable deviation various temperatures Kohler's rule. Presence strong inhomogeneity disorder structure concluded be responsible reduction thermal conductivity this compound.