Influence of Cu film microstructure on MOCVD growth of BN

摘要: Boron nitride is of great interest as a 2 dimensional (2D) insulator for use an atomically flat substrate, gate dielectric and tunneling barrier. At this point the most promising widely used approach growth mono-to-few layer BN metal catalyzed chemical vapor deposition (CVD). Bulk Cu foil has been popular substrate h-BN graphene, such there are well developed processes preparation growth. As alternative thin films deposited on insulating have some advantages over foil, including more uniform thermal contact with heater, better mechanical stability, transfer free processing, selective area However, SiO2 present their own unique problems like stability small grain size. Here we results few-layer by organic (MOCVD) SiO2/Si. We explore effects annealing conditions morphology in order to understand impact BN. To minimize interdiffusion, investigate Ni buffer layers. were studied after SiO2/Si using Raman AFM determine film microstructure few films.