Antioxidants for post-CMP cleaning formulations
作者： Jeffrey Barnes , Emanuel Cooper , Karl Boggs , Prerna Sonthalia , David Angst
DOI:
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摘要: An cleaning composition and process for post-chemical mechanical polishing (CMP) residue contaminants from a microelectronic device having said thereon. The compositions include novel corrosion inhibitors. achieves highly efficacious of the post-CMP contaminant material surface without compromising low-k dielectric or copper interconnect material.
glgoo.top参考文章(91)
Irl E. Ward, Stripping compositions containing alkanolamine compounds ,(1995)
Oana Leonte, Robert Chebi, Solutions for cleaning silicon semiconductors or silicon oxides ,(2005)
Yoshihiro Uozumi, Atsushi Okuyama, Kazuhiko Takase, Masafumi Muramatsu, Takuo Ohwada, Takahito Nakajima, Kazumi Asada, Norio Ishikawa, Yukino Hagino, Tsuyoshi Matsumura, Post-dry etching cleaning liquid composition and process for fabricating semiconductor device ,(2005)
Naoyuki Koyama, Masato Yoshida, Masaya Nishiyama, Youichi Machii, Polishing compound and method for polishing substrate ,(2002)
Matthew I. Egbe, Denise Geitz Jennings, Composition for removing photoresist and/or etching residue from a substrate and use thereof ,(2005)
Nobuo Kawahashi, Yuji Namie, Masayuki Hattori, Cleaning composition for semiconductor components and process for manufacturing semiconductor device ,(2005)
Ichiro Hayashida, Hironori Mizuta, Masahiko Kakizawa, Mayumi Kimura, Semiconductor wafer cleaning agent and cleaning method ,(2001)
Hiroaki Tomimori, Hidemitsu Aoki, Keiji Hirano, Tatsuya Koita, Stripping agent composition and method of stripping ,(2001)
Pamela M. Visintin, Thomas H. Baum, Michael B. Korzenski, Formulations for removing copper-containing post-etch residue from microelectronic devices ,(2006)
Narasimba M. Rao, Donald A. Johnson, Walter H. Goodman, Process for removal of primarily iron oxide deposits ,(1992)