作者: O. P. Kowalski , S. D. McDougall , B. C. Qiu , G. H. Masterton , M. L. Armstrong
DOI: 10.1117/12.809088
关键词:
摘要: An individually addressable visible semiconductor laser diode array with a 20 μm pitch is demonstrated that highly suited for deployment in next-generation digital print systems. The array, operating at 660 nm, comprises 22 single mode lasers fabricated on GaInP/AlGaInP/GaAs substrate. flip-chip bonded onto patterned ceramic submount enables the individual elements to be driven independently and integrated into 26-pin butterfly package. Arrays tested CW exhibit low threshold current (<20 mA per emitter), up 50 mW output power channel high slope efficiency (0.9 W/A) characteristic temperature of over 100 K.