Reactive interdiffusion at metal–CdS and metal–CdSe interfaces

摘要: The initial stages of room temperature interface formation for reactive and unreactive metals on II–VI single crystal semiconductors have been studied using UPS, XPS, AES, Kelvin work function, photoinduced band bending measurements. For we see evidence extended reacted with new chemical structure electronic properties. example, Cu CdS or CdSe forms a thick (∠250 A) layer as shown by the appearance dissociated Cd Cu–chalcogen alloy formation. Pre‐evaporation thin (10 Ti interlayer dramatically modulates many aspects subsequent interdiffusion, including junction abruptness stability, stoichiometry semiconductor out‐diffusion, nature intermetallic compounds that are formed. In contrast, (unreactive) shows no reaction although substantial in‐diffusion is indicated. These microscopic parameters related to macroscopic Schottky barrier