NAND-type flash memory devices and methods of fabricating the same
作者： Kyu-Charn Park , Sung-Hoi Hur , Kwang-Shik Shin , Heung-kwun Oh
DOI:
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摘要: NAND-type flash memory devices and methods of fabricating the same are provided. The device includes a plurality isolation layers running parallel with each other, which formed at predetermined regions semiconductor substrate. This also string selection line pattern, word patterns ground pattern cross over active between layers. Source in adjacent to opposite pattern. source covered common
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