Distinctive features of boron distribution in silicon under high-dose ion-implantation doping

摘要: The method of ion-implantation doping (IID) is used extensively in the fabrication semiconductor devices as it allows different dopants to be introduced into a controlled manner. authors present their results measurements boron distribution profiles silicon after IID, using secondary-ion mass spectroscopy (SIMS), and electroreflection spectroscopy. studied samples p/sup +/-p structures, where +/ layer was obtained by IID with values energy dose single-crystal an initial p-type carrier concentration 1.6 x 10/sup 16/ cm/sup -3/ (111) orientation.