作者: N. Theodoropoulou , A. F. Hebard , M. E. Overberg , C. R. Abernathy , S. J. Pearton
DOI: 10.1103/PHYSREVLETT.89.107203
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摘要: Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized concentrations near 3 at. %. The magnetism is suppressed when the dose increasedor decreased away from % value, or n-type substrates are used. At low temperatures saturated moment on order 1 Bohr magneton, and spin wave stiffness inferred Bloch-law T / 2 dependence magnetization provides an estimate c = 385 K Curie that exceeds experimental 270 K. presence clusters hysteresis at least 330 attributed disorder proximity a metal-insulating transition.