Fission Fragment Damage in Semiconductors and Ionic Crystals

作者: Kazuhiko Izui

DOI: 10.1143/JPSJ.20.915

关键词:

摘要: Electron microscopic observation is carried out on fission fragment-irradiated germanium, silicon and magnesium oxide which have different grain size thickness. Tracks of fragments are observed in evaporated films germanium with about 10A 50A size, while no track other materials. A number small spots found to appear large crystal after the irradiation. It by electron diffraction study that there a disturbed or recrystalized regions highly irradiated crystals silicon. The mechanism thermal spike discussed some detail based estimate energy distribution excited electrons relaxation times for various collision processes these electrons, new model applicable non-metallic presented. Calculations temperature region this g...

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