Strain modulated variations in monolayer phosphorene n-MOSFET
作者： Arnab Mukhopadhyay , Lopamudra Banerjee , Amretashis Sengupta , Hafizur Rahaman
DOI: 10.1109/EDSSC.2015.7285100
关键词:
摘要: We investigate the effect of tensile and compressive strain in Phosphorene FET. Different percentage are applied on monolayer along zigzag edge corresponding effects bandgap, electron effective mass ON current analyzed. The optimum region is observed at 4% for application FET device. About 8.5 times improvement was this percentage.
sci-hub.se 参考文章(7)
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